Abstract
We have developed a new instrumentation technique for Si crystal growth process of Czochralski (CZ) method for the purpose of the productivity improvement. In this paper, we developed the online measurement technique for diameter profile of Si crystal in growth furnace. Our new technique can measure the crystal diameter profile with higher accuracy than conventional optical measurement. The features of this technique are the data correction method and the elimination method of the effect of crystal swing. The measurement error of maximum diameter is within 0.18mm, and the measurement error of minimum diameter is within 0.09mm. This technique contributes to the improvement of CZ Si crystal productivity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series C
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
