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Abstract
It is difficult to estimate and predict the fatigue state of switchgear in traction converter of urban Electric Multiple Unit (EMU). At the same time, this is just the purpose of this paper. Firstly, the power loss and junction temperature of the device are analyzed by using the results of electro-thermal simulation and actual working conditions. Then, a novel Bi-directional accelerated fatigue test (BAFT) is proposed, and the data obtained from BAFT are used to establish a fitting fatigue model for a specific switch device. BAFT data enable the fatigue interaction between Insulated Gate Bipolar Transistor (IGBT) and Free Wheeling Diode (FWD) to be displayed in the common switching device module, and the interaction is represented by an acceleration factor. In the fatigue model, the service life and fatigue state of the equipment is related to the equivalent fatigue current which is used to generate the fatigue. The equivalent fatigue current is observed by the proposed analysis identification model. The historical data of fatigue values are subjected to Gray Model (GM) (2, 1) for trend prediction, and then the service time of the switch device is calculated using the predicted fatigue values from GM (2, 1). The examples presented in this paper are based on recorded field data.
Highlights
The urban rail transit system is an important and friendly way of tourism in the metropolis
The faults or failure of switching devices accounted for 10% to 20% of the total number of faults, which is even higher for the Electric multi-unit (EMU) with a total distance of more than 105 kilometers
If fatigue state can be predicted, the failure rate of switching device can be greatly reduced by manual maintenance or replacement [4] [5]
Summary
The urban rail transit system is an important and friendly way of tourism in the metropolis. Using the data obtained from BAFT, the acceleration factor is introduced into the fatigue model to illustrate the effect of FWD action on the cumulative damage process of the device. This means that TjD affects the temperature change of each layer in the device and TjQ. Thermal stress is caused by temperature change and the difference in CTE, so TjD results in thermal stress in the solder layer, DBC and even IGBT core This is why FWD action should never be neglected in the fatigue process of switchgear, especially in the case of TC. From eq (3), it means that FWD actions accelerate 23.77% of the accumulated damage speed
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