Abstract
Thermal monitoring is crucial for the protection and control of power electronics devices. On-state voltage drop is the most popular parameter for junction temperature estimation. However, there is still a lack of compositive junction temperature estimation technique with a fast response for the insulated gate bipolar transistor (IGBT) module, including a freewheeling diode (FWD). A novel in situ IGBT and FWD junction temperature estimation technique for IGBT module based on IGBT and FWD on-state voltage drop measurement is proposed in this paper. The proposed method can measure the on-state voltage drops of IGBT and FWD on-line with high accuracy. With in situ acquirement of the on-state voltage drops of IGBT and FWD and utilizing the linear relationship between IGBT and FWD junction temperatures and their on-state voltage drops, the IGBT module junction temperatures can be estimated. The simulation and experimental results validate the feasibility and performance of the proposed on-state voltage drop measuring approach under various IGBT module operating cases. The proposed technique has characteristics of high response speed, non-invasiveness for normal converter operating, and simple structure.
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