One-Selector One-Resistor Cross-Point Array With Threshold Switching Selector

Abstract

This paper investigates the impact of threshold switching (TS) selector characteristics on the one-selector one-resistor (1S1R) cross-point array performance. TS selector parameter requirements are extracted for 1 Mb array, considering 1S, 1R cell compatibility, read/write margin, and power consumption constraints. The SPICE simulation results show that the threshold voltage ( $V_{\mathrm {\mathbf {th}}}$ ) and the ON-state resistance ( $R_{s}$ ) are important selector parameters. Low $V_{\mathrm {\mathbf {th}}}$ eliminates 1R disturb issue during the read operation, but this comes at the expense of losing full cell nonlinearity (NL) during the write operation. Increase of $V_{\mathrm {\mathbf {th}}}$ and $R_{s}$ improves the full cell NL and alleviate read disturb issue. However, these reduce 1S1R read window and additional voltages are required for both read and write operations. Compared with selector with nonabrupt current-voltage ( $I$ – $V$ ) characteristics, the TS selector is more favorable for the low-voltage operation. Finally, different reported TS selectors are evaluated, and the improvement directions are suggested.