One-dimensional MAGFET device with a polysilicon cross-shaped hall plate

Abstract

This paper presents a macro model of a one-dimensional (1-D) magnetic MOSFET (MAGFET) with a differential polysilicon cross-shaped Hall plate (CSHP) designed to eliminate the offset voltage and to enlighten measured Hall voltage. Additionally, a readout circuit consists of a pre-amplifier, a low-pass filter, and off-chip instrumental amplifier (IA) with 30 dB, is designed to amplify the output Hall voltage with a gain of 40 dB. Measurements reveal that the maximum output Hall voltage VH, the optimum current-related magnetosensitivity SRI, the optimum voltage-related magnetosensitivity SRV, the averaged nonlinearity error NLE, and the relative bias current Ibias are 4.381 mV, 520.5 V/A-T, 40.04 V/V-T, 7.19%, and 200 μA, respectively, for the proposed 1-D MAGFET with a polysilicon CSHP and readout circuit.