One-dimensional continuous analytic potential solution to generic oxide–silicon–oxide system

Abstract

A one-dimensional continuous analytic potential solution to a generic oxide–silicon–oxide system is developed. With the analytic solution, the potential distribution in the silicon film is predicted. A physics-based relation between surface potentials is also derived and then applied to the generic oxide–silicon–oxide metal–oxide–semiconductor field-effect transistors (MOSFETs) for the calculation of surface potentials