Abstract
Theoretical and experimental work that presents the possibility for a high-speed, low-power one-transistor room-temperature dynamic RAM (DRAM) technology in GaAs is discussed. Isolated storage capacitors have demonstrated over 20 min of storage time at room temperature with charge densities comparable to that obtained with planar silicon technology. One-transistor MESFET- and JFET-accessed DRAM cells have been fabricated and operated at room temperature and above. The standby power dissipation of these first cells is only a small fraction of the power dissipated by the best commercial GaAs static RAM (SRAM) cells. >
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