Abstract
This study investigates the preparation of PbSe-ZnSe composite thin films by simultaneous hot-wall deposition (HWD) from multiple resources. The XRD result reveals that the solubility limit of Pb in ZnSe is quite narrow, less than 1 mol%, with obvious phase-separation in the composite thin films. A nanoscale elemental mapping of the film containing 5 mol% PbSe indicates that isolated PbSe nanocrystals are dispersed in the ZnSe matrix. The optical absorption edge of the composite thin films shifts toward the low-photon-energy region as the PbSe content increases. The use of a phase-separating PbSe-ZnSe system and HWD techniques enables simple production of the composite package.
Highlights
Quantum-dot solar cells have attracted much attention because of their potential to increase conversion efficiency [1]
The samples were successively water-quenched to maintain the solubility range at a synthesis temperature crushed into powder for the following experiment setup
We investigated the preparation of PbSe-ZnSe composite thin films by a co-evaporating hot-wall deposition (HWD) method
Summary
Quantum-dot solar cells have attracted much attention because of their potential to increase conversion efficiency [1]. A widegap semiconductor ZnO is investigated, since the band gap and the energetic position of the valence band maximum and conduction band minimum of ZnO are very close to that of TiO2 [8]. Most of these composite materials were synthesized through chemical techniques, physical deposition, such as sputtering, is useful. Of a PbSe-ZnSe composite thin film was investigated by simultaneous HWD from multiple sources for the first time. Experimental details A PbSe-ZnSe composite thin film was prepared by the HWD method. Nanoscale elemental mapping was performed using scanning transmission electron microscopy (STEM, Hitachi HD-2700) in EDX mode (EDAX model: Genesis) operating at 200 kV with an energy resolution of approximately 145 eV
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