Abstract
A one-step direct solvothermal synthesis of an Ln metal-organic framework (MOF) film is reported. The LnHL (Ln = Tb and Gd) films that were deposited on a Gd2O3 subtrate are continuous and smooth. The Gd0.9Tb0.1HL film can be used as a ratiometric thermometer, showing good linear behaviour in the temperature range of 110-250 K with a sensitivity up to 0.8% K(-1).
Highlights
A one-step direct solvothermal synthesis of an Ln metal–organic framework (MOF) film is reported
The Gd0.9Tb0.1HL film can be used as a ratiometric thermometer, showing good linear behaviour in the temperature range of 110–250 K with a sensitivity up to 0.8% KÀ1
Silicon wafers, graphene, glass, indium tin oxide (ITO), and porous aluminium oxide are mostly used as substrates for MOF films.[13,14,15,16,17,18,19,20]
Summary
A one-step direct solvothermal synthesis of an Ln metal–organic framework (MOF) film is reported. The Gd0.9Tb0.1HL film can be used as a ratiometric thermometer, showing good linear behaviour in the temperature range of 110–250 K with a sensitivity up to 0.8% KÀ1. We report for the first time the use of an Ln oxide as substrate for the deposition of Ln MOF films by in situ solvothermal methods.
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