One‐Step Fabricated and Solution‐Processed Hybrid Gate Dielectrics for Low‐Voltage Organic Thin‐Film Transistors

Abstract

Here, we report the facile one‐step fabrication of rationally designed hybrid gate dielectric films for low‐voltage organic thin‐film transistors. To generate facile one‐step fabricated and solution‐processed organic–inorganic hybrid dielectric films with high dielectric properties, we designed the multicomponent precursor solution by employing high‐k oxide materials to attain a large capacitance and cross‐linkable agents to allow for processability and reducing the surface energy of dielectric films. After spin‐coating with the precursor solution and the subsequent thermal annealing process, we obtained cross‐linked organic–inorganic hybrid dielectric films, exhibiting excellent dielectric properties with a low leakage current density (~10−5 A/cm2) and high capacitance (295 nF/cm2). The effectiveness of the hybrid dielectrics was demonstrated by realizing high‐performance organic thin‐film transistors at low operating voltages, mobility up to 0.31 cm2/V/s, high on/off current ratio (~105), and low threshold voltage (−0.8 V).