Abstract
A one-step electrodeposition of CuInSe2 (CIS) was carried out to obtain stoichiometric CuInGaSe2 thin films for solar cell devices. The deposition behavior and the optimum deposition potential and composition were analyzed using linear sweep voltammetry (LSV). Structural and morphological analysis was investigated by X-ray diffraction and scanning electron microscopy studies. Effect of an anionic surfactant sodium dodecyl sulfate (SDS) on deposition behavior and characteristics was also studied.
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