One-Sided Schmitt-Trigger-Based 9T SRAM Cell for Near-Threshold Operation

Abstract

This paper presents a one-sided Schmitt-trigger-based 9T static random access memory cell with low energy consumption and high read stability, write ability, and hold stability yields in a bit-interleaving structure without write-back scheme. The proposed Schmitt-trigger-based 9T static random access memory cell obtains a high read stability yield by using a one-sided Schmitt-trigger inverter with a single bit-line structure. In addition, the write ability yield is improved by applying selective power gating and a Schmitt-trigger inverter write assist technique that controls the trip voltage of the Schmitt-trigger inverter. The proposed Schmitt-trigger-based 9T static random access memory cell has 0.79, 0.77, and 0.79 times the area, and consumes 0.31, 0.68, and 0.90 times the energy of Chang's 10T, the Schmitt-trigger-based 10T, and MH's 9T static random access memory cells, respectively, based on 22-nm FinFET technology.