One micrometre scale self-aligned cobalt disilicide Schottky barrier diodes

Abstract

CoSi2/n-type silicon (111) Schottky barrier diodes on a 1 µm scale have been fabricated using a self-aligned silicide process incorporating magnetron sputtering and rapid thermal processing, in an industrial environment. Anneal temperatures in the range 700–1100°C have been used, and ideality factors of 1.06–1.07 were obtained in the range 700–900°C with larger values for higher temperatures. The consistency in the values of the ideality factor indicates that a wide annealing temperature window exists for the successful fabrication of CoSi2/silicon diodes.