Abstract
Based on the methodologies and experimental findings presented in Part I, we demonstrate the general applicability of the <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BD</sub> exponential law of reciprocal voltage, <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BD</sub> ~ exp( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</i> / <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VG</i> ), in comparison with the <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BD</sub> power-law model for SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based dielectrics stressed in the FN regime. This is done for a wide range of oxide thicknesses and stressed in a wide range of stress voltages and temperatures. We also analyze the consistency of voltage acceleration models with the voltage dependence of the Weibull slope. This is done considering the failure percentile dependence of voltage acceleration and can explain the voltage-independent Weibull slopes reported for ultrathin oxides in the DT regime and the voltage-dependent Weibull slopes reported for thick oxides stressed in the FN regime. This paper demonstrates how the application of complementary analysis methodologies to a complete experimental database allows reaching sound conclusions about the voltage acceleration model of oxide breakdown, thus solving a long lasting controversy.
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