Abstract
We report on experiments aimed at producing three-dimensional self-organization in InAs quantum-dot multilayers embedded in GaAs. These InAs/GaAs quantum-dot multilayers have been grown by molecular beam epitaxy. Employing atomic force microscopy, we have analyzed the island density in samples with different number of periods of InAs/GaAs bilayers The results reveals a decrease and a tendency to saturation of the island density with an increase in the number of periods, as a three-dimensional self-organization characteristic of these samples. Optical properties of the samples are examined via photoluminescence spectroscopy. The evolution of the quantum-dot photoluminescence peak position indicates an increment in the mean size of the buried islands and a relative homogenization in size of the quantum dots, as the number of periods increases. The results of the optical measurements agree with the morphological data, and characterize a spatial process of self-organization, related to the increment of the number of periods in the multilayers.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call