Abstract
Comprehensive review and reanalysis are done on previously reported experimental hot carrier degradation data in various MOSFET architectures. The universality of time kinetics and voltage acceleration of degradation, obtained using multiple measurement techniques, is analyzed for OFF- and different ON-state modes in long and short channel planar and drain extended MOSFETs and FinFETs. The similarities and differences of such diverse measurement methods are analyzed. Existing theories are qualitatively benchmarked against this analysis, and capabilities as well as inconsistencies of those theories are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
