Abstract
An optimization of transport parameters for Monte Carlo simulation of electrons in silicon has been performed in order to obtain quantitative agreement between simulations and experiments when dealing with problems involving very-high-energy electrons, such as impact ionization and the injection of hot-electrons into the gate oxide of MOSFETs. An original physically based model for electron injection into SiO/sub 2/ is proposed which consistently accounts for both thermionic injection and tunneling of hot electrons. The results of numerical simulations are compared with experimental data on nMOSFET substrate current and bulk hot-electron gate current. >
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