Abstract
AbstractUsing the Green's function technique a general expression of the one‐phonon resonance Raman scattering cross‐section is derived. This expression may be used to calculate the influence of a slowly varying random field present in the electronic subsystem on the resonance dependence. The theory is applied to the case of a fluctuating gap and internal random electric field. Local scattering amplitudes are obtained and the configurational average of the product of the scattering amplitudes is investigated. It is shown that this two point average effectively reduces to the averaging of the scattering amplitudes with one point distribution functions.
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