Abstract
A theory of MIS capacitance taking into account the two-band situation in the space-charge region is presented. The simple and universal C-formulas can be used for extrinsic as well as for intrinsic semiconductor in arbitrary (excluding degeneracy or quantization) band bending near the interface. Previous results are obtained in a more clear and conventient way and are extended to arbitrary steady-state conditions.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
