On the temperature-dependent characteristics of a Pd/InAlAs based electroless-plating gate metamorphic heterostructure field-effect transistor (MHFET)

Abstract

In this work, the interesting temperature-dependent characteristics of a Pd/InAlAs based metamorphic heterostructure field-effect transistor (MHFET) with an electroless plating (EP)-gate approach are demonstrated and studied. Based on the low-energy and low-temperature chemical deposition, the EP technique can reduce the thermal damage and disordered-states to form a better metal–semiconductor (MS) interface. The EP-gate device shows better performance including higher turn-on voltage (0.978V), lower gate leakage current (2.1μA/mm), higher Schottky barrier height (0.742eV), lower ideality factor (1.15), higher transconductance (272.4mS/mm), higher drain saturation current (420.2mA/mm), wider IDS operating region (291.3mA/mm), and higher voltage gain (449.7) than a thermal evaporation (TE)-gate one over a wide temperature range (300–420K).