Abstract
Ion implantation was used to introduce 20 at.% Si into an A-15 Nb3Al0.9Si0.1 substrate. The surface was depleted of Al by a diffusion anneal. The Al deficiency was replaced with Si by successive implantations. The surface structures were determined from reflection electron diffraction photographs. After depletion and implantation, the sample surfaces had a disordered bcc structure. A subsequent 800 °C anneal transformed these surfaces into A-15 Nb3Al0.2Si0.8 by epitaxial recrystallization.
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