Abstract
The subthreshold operation (subthreshold swing and leakage current) and the short channel effects (DIBL and charge sharing) are investigated in partially and fully depleted deep submicron N-channel SOI-MOSFETs by numerical simulation and experimental results. The use of lightly doped ultra-thin silicon films in single gate SOI-MOSFETs is shown to substantially improve the overall electrical properties. Furthermore, a double gate control in thin film SOI-MOSFETs leads to an ideal subthreshold swing together with optimum short channel effects and a reduced dependence on doping, Si layer thickness and drain bias.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
