Abstract

Modifications of Ni/Si and Fe/Si bilayers induced by swift heavy ions were studied in the regime of pure electronic stopping. Polycrystalline films, 65–75nm thick, were deposited via electron evaporation (Ni) or pulsed laser deposition (Fe) onto Si wafers and irradiated at ⩽300K with 350-MeV Au26+ ions to fluences of up to 5×1015ions/cm2. The samples were analyzed by Rutherford backscattering spectroscopy, X-ray diffraction and the magneto-optical Kerr effect. In the Fe/Si samples, a 20nm 57Fe layer was interlayed between natFe and Si in order to monitor interface mixing and phase formation by means of Moessbauer spectroscopy. In both systems, a high mixing rate of ≈60nm4 was found, correlated with relaxation of the as-deposited stress and uniaxial magnetic anisotropy. At higher fluences, full interdiffusion gives rise to amorphous silicide phases, build-up of stress and loss of magnetic texture.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.