Abstract
We report on heavy-ion-induced modifications of 65–75nm thick Ni/Si bilayers in the regime of electronic stopping (350MeV 197Au26+-ions) and nuclear stopping (400keV Xe+-ions). The samples were analyzed by means of Rutherford back-scattering spectroscopy, X-ray diffraction and magneto-optical Kerr effect. For both types of ions, interface mixing was observed, correlated with full relaxation of the as-deposited stress and uniaxial magnetic anisotropy. For the higher fluences, full intermixing, rebuild-up of stress and loss in magnetic texture occurred. It can be concluded that for both types of ion beam stopping, interface mixing and changes of magnetization occur for similar reasons.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
