On the Spectra of Impurity Photoconductivity of n‐ and p‐Type Indium Antimonide at Low Temperatures

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AbstractThe spectra of impurity photoconductivity of n‐ and p‐type indium antimonide at 6, 40, and 80 °K are investigated. The oscillations observed in the impurity photoconductivity of p‐type samples at helium temperature result from the interaction of hot holes and longitudinal optical phonons. It is found that the photoexcitation of electrons from the deep donor level to the conduction band in high electric fields leads to oscillatory impurity photoconductivity with periods equal to the limiting energies of the longitudinal and transverse acoustic phonons; the photocurrent value and relative amplitude of the oscillations depend nonlinearly on the electric field. The field dependence of the electron lifetime is evaluated.