Abstract
The requirements to achieve high detection efficiency (above 50%) and gigahertz (GHz) frame rate for the proposed 42-keV X-ray free-electron laser (XFEL) at Los Alamos are summarized. Direct detection scenarios using C (diamond), Si, Ge and GaAs semiconductor sensors are analyzed. Single-photon counting (SPC) mode and weak SPC mode using Si can potentially meet the efficiency and frame rate requirements and be useful to both photoelectric absorption and Compton physics as the photon energy increases. Multilayer three-dimensional (3D) detector architecture, as a possible means to realize SPC modes, is compared with the widely used two-dimensional (2D) hybrid planar electrode structure and 3D deeply entrenched electrode architecture. Demonstration of thin film cameras less than 100-μm thick with onboard thin ASICs could be an initial step to realize multilayer 3D detectors and SPC modes for XFELs.
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