Abstract
The hot-carrier (HC) degradation of ultra-deep submicrometer lightly doped drain (LDD) metal oxide semiconductor field-effect transistors (MOSFETs) is studied in detail. A further experimental investigation of the two-stage HC degradation in 0.18 mum LDD NMOSFETs is presented. The effects of degradation due to HC stress-induced defects in the oxide spacer and the gate-drain overlap/channel regions separately during stress time are determined. The self-limiting HC degradation mechanism in ultra-deep submicrometer LDD NMOSFET's is proposed completely
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