Abstract
Conventional scaling is no longer effective to continue device performance trend because of technological difficulties in the scaling of key device parameters. In this paper, the authors discussed device scaling options beyond convention device structures. Recent progress in advanced gate stack, ultrathin body silicon on insulator (UTSOI) MOSFET and FinFET structures for improved electrostatic were discussed. Various mobility enhancement techniques were also discussed including strained silicon hybrid orientation technology, and Ge FET.
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