Abstract
The role of silicon as the possible background dopant in epitaxial GaAs layers grown by the Ga-AsCl3-H2 process has been investigated. To this end the dependence of the donor concentration on AsCl3 partial pressure and deposition temperature was measured with and without injection of a known partial pressure of SiCl4 into the deposition zone. A considerably larger donor concentration was found in the former case. These data were compared with calculated values obtained from a thermodynamic treatment in which both the injected SiCl4 and the chlorosilanes generated by reaction of the gas phase components with the quartz reactor were taken into account. The experimental findings and their qualitative agreement with the computed behavior lend support to the thesis that silicon is responsible for the background doping. The unexpectedly low values of the background doping suggest that the formation of chlorosilanes is a kinetically limited process.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
