Abstract
Epitaxial layers of GaAs have been deposited using the open tube AsH 3 system. The formation of pits and hillocks on the surface of the epitaxial layer was found to be a function of the flowrates of the reactant gases, the total carrier flowrate, and the deposition temperature and was correlated with the variation of the concentration of GaCl present in the deposition zone.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
