Abstract
The influence of I2 on the kinetics of spontaneous as well as galvanostatically induced growth of insulating oxide films on Zr metal was studied in KI solutions as a function of concentration. The stability of the anodic oxide films on Zr surfaces was investigated by measuring the potential and the two impedance components of the electrode-solution interface under currentless conditions. In all cases, the passivating oxide films were found to grow with time. The anodic polarization carried out at different current densities produced charging curves whose potentials increases with current density. The presence of increasing amounts of I2 in the KI medium always shifts the potential of ZrO2 films towards more positive values, most probably because the formed triiodide ion (I3 − in the electrolyte enhances the formation of zirconium-iodine species at the electrode surface. A dissolution-precipitation mechanism was proposed which is consistent with the above results as well as with the results of the effect of temperature on the currentless film growth process.
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