Abstract
β-Ga2O3 films are deposited on (0001) sapphire substrates using triethylgallium (TEGa) and nitrous oxide (N2O) under high N2O/TEGa ratios by atomic layer deposition (ALD). Au-β-Ga2O3-Au metal/semiconductor/metal (MSM) solar-blind deep ultraviolet (DUV) photodetectors (PDs) are prepared using Au interdigitated electrodes deposited by thermal evaporation. The ALD-grown β-Ga2O3 films and Au-β-Ga2O3-Au DUV MSM PDs are irradiated with gamma ray to explore the response of gamma irradiation on the β-Ga2O3 films and β-Ga2O3 DUV MSM PDs. It is found that gamma irradiation tends to deteriorate the structural properties of the β-Ga2O3 films and dark current of the β-Ga2O3 DUV MSM PDs. Nevertheless, it also results in an increase in the 254 nm illuminated photocurrent of the Au-β-Ga2O3-Au DUV MSM PD. Energy band diagram schematics of the biased Au-β-Ga2O3-Au DUV MSM PDs are presented to interpret the influence of gamma irradiation-induced defects on the performances of the Au-β-Ga2O3-Au DUV MSM PDs.
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