On the reduction of hole mobility in strained p-SiGe layers

Abstract

Using the secondary-ion mass spectrometry profile of the SiGe-base heterojunction bipolar transistor of Patton et al. [IEEE Trans. Electron. Dev. 11, 171 (1990)] we retrieve the hole drift mobility for strained Si1−xGex (SiGe) layers up to Ge fractions of 10% and for dopant levels in the range 1016–1019 cm−3. In contrast to theoretically calculated values, the results show a significant reduction in the hole mobility.