Abstract
Narrow metallic structures to collect photocurrent in solar cells can be fabricated by copper electroplating and implementation of a barrier layer to prevent copper diffusion. Such barriers can be formed from electrolessly deposited Ni layers. In this work, the conditions to selectively deposit NiP on top of Si laser-patterned lines are investigated. With the conventional HF preclean, Pd activation and electroless reaction, parasitic deposition is observed on the surrounding insulating SiNx layer, activated by superficial Si-H bonds. An oxidizing treatment using Caro's acid is successfully introduced prior to Pd activation, yielding structures suitable for further integration with copper electroplating.
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