Abstract
This paper presents the results of our experimental study of high resolution map of induced photocurrent in monocrystalline silicon solar cells. Photovoltaic solar cells are evaluated by Near-field Optical Beam Induced photocurrent (NOBIC), as well as by Scanning Near-field Optical Microscope (SNOM) topography and reflection. The correlation between reflection and transport characteristic indicates possibility of this diagnostic tool. Therefore the SNOM and NOBIC represent the coupling of very useful methods to provide a non-destructive local characterization on silicon semiconductor solar cells.
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