On the possibility of applying the bers apparatus to modeling the processes of heat and mass transfer caused by electrons in a planar multilayer medium

Abstract

Some possibilities of joint application of the Bers factorial-function apparatus and matrix method to the mathematical modeling of heat and mass transfer processes in a multilayer medium are considered. The possibility of using this method is shown by the example of the diffusion of minority charge carriers generated by a wide electron beam in multilayer semiconductor planar structures. The results of calculations by this method for homogeneous and three-layer semiconductor structures are presented.