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Abstract
A new configuration realizing water quality monitoring device using ISFET involving low power CMOS Integrated “Ion Sensitive Field Effect transistor (ISFET) – Operational Amplifier is presented. The study’s main focus is on simulation of power and performance analysis of ISFET device, which is used for water quality monitoring. This approach can improve calibration of device to a fairly wide range without the use of a high speed digital processor. The conventional device has a drawback of slow slew rate but in this novel design, the device has a better slew rate. A new slew rate enhancement (SRE) incorporated into a ISFET, which does not affect the small signal frequency response. The functionality of the circuit is tested using Tanner simulator version 15 for a 70nm CMOS process model also the transfer function realization is done on MATLAB R2011a version, the Very high speed integrated circuit Hardware description language(VHDL) code for the same scheme is simulated on Xilinx ISE 10.1 and various simulation results are obtained. Simulation results are included to demonstrate the results.
Highlights
Monitoring the pH of water resources and sewage discharge for water pollution is typical and necessary task in today’s overdeveloped scenario
The studies mainly focus on the simulation of power and performance analysis of Ion Sensitive Field Effect transistor (ISFET) device, which is used for water quality monitoring applications [17,18,19,20,21,22,23]
The proposed circuit of device is shown above, in which the output of the ISFET sensor is fed into one of the terminal of the voltage follower, which helps from the loading effect and keeping the voltage level constant irrespective of the change in the current value .This practise increases the sensitivity of the sensor, and even a very small value can be observed at the output
Summary
Monitoring the pH of water resources and sewage discharge for water pollution is typical and necessary task in today’s overdeveloped scenario. The studies mainly focus on the simulation of power and performance analysis of ISFET device, which is used for water quality monitoring applications [17,18,19,20,21,22,23]. The conventional device has a drawback of slow slew rate but in this novel design the device has a fairly good slew rate this device has a simple architecture, and is very suitable for the water quality monitoring application In this novel design, the device is free from noise and other effect and is seen consuming low power of the order of 13 μW. The Id-Vgs transfer characteristic of the ISFET, working in triode region, can be observed similar with that of MOSFET: Ids
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