Abstract
The origin of the low-frequency noise in graded- channel silicon-on-insulator nMOSFET is studied as a function of the back-gate bias at a low drain-to-source bias. It is shown that an excess noise peak that is correlated with the peak in the transconductance can be observed. This excess noise is due to a generation-recombination component in the low-frequency range, which is suppressed when the back gate is in accumulation mode.
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