A physically-based low-frequency noise model for NFD SOI MOSFET's

Jin Wei ,P.K Ko,P.c.h Chan ,S.k.h Fung

doi:10.1109/soi.1998.723084

A physically-based low-frequency noise model for NFD SOI MOSFET's

Jin Wei , P.K Ko + Show 2 more

https://doi.org/10.1109/soi.1998.723084

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Publication Date: Oct 5, 1998

Citations: 8

Affiliation: University of Hong Kong, Hong Kong University of Science and Technology

#Excess Noise #Floating-body Effect + Show 8 more

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Abstract

The floating-body effect (FBE) in nonfully-depleted (NFD) SOI MOSFETs gives rise to excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through FBE. The noise model predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the corner frequency in the noise spectrum and the AC output impedance.

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