Abstract
ABSTRACTIn this paper we summarise the TEM observations carried out on InxGa1-xAs strained layers grown by Molecular Beam Epitaxy on (100) InP substrates (xIn in the range 54.3%-62.5%). The evolution of the modulation wavelength with the epilayer thickness, growth temperature (Tg) and layer-substrate strain is reported. The quantification of the amplitude of the composition variation linked to the coarse contrast modulation from the theoretical fitting of the Optical Absorption spectra is also presented. In view of these results we suggest a model for the appearance of the contrast modulations in ternary and quaternary III-V alloys according to the different structural configurations driven by the alloy stabilisation inside the miscibility gap due to the minimization of the free Gibbs energy as Tg increases.
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