Abstract
Abstract There are huge differences in dynamic on-resistance Ron, also known as current-collapse, between current GaN power HEMT technologies. Here we illustrate this fact with dynamic Ron measurements on two commercially available devices from 2 different manufacturers, with one showing more than a factor of 2 increase in dynamic Ron after OFF-state drain bias (type 1) and the other one
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call