Abstract
ZnGeN2 as exemplary compound for II‐IV‐N2 materials allows fascinating insights into this class of materials that can be thought of as earth‐abundant alternative to wurtzite‐type III–V semiconductors. A classical route to achieving ZnGeN2 is through the ammonolysis reaction of Zn2GeO4 at higher temperatures. Using a combination of X‐ray and neutron powder diffraction together with chemical analyses, a systematic study of the influences of time and temperature on this reaction, yielding in the formation of zinc germanium oxide nitrides in a wurtzite‐type structure with variable elemental compositions is presented. This further allows to identify the underlying reaction mechanism of this ammonolysis reaction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
