Abstract
The charge transfer luminescence process has been extensively studied due to its influence on the optical properties of various phosphors such as photodarkening process which is a limiting factor for the lifetime of high-power fiber lasers. In this work, we report CT luminescence in Yb3+:YAG single crystals at 3.3 eV excitation. It was found that this luminescence is caused by CT processes between Yb3+ ions and perturbed F+ centers formed during crystal growth due to the incorporation of some portion of Y3+ ions into Al3+ sites. CT luminescence in such systems can be produced at low photon energies equal to 3.3 eV excitation, with Stokes shift less than 500 cm−1.
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