Abstract
In this paper, we present a comprehensive model for the resistance in graphene nanoribbon (GNR) interconnects. We use the recent experimental and theoretical results to model the impact of stacking of graphene layers in multi-layer GNR interconnects. We compare the resistance of GNR interconnects with both single-walled carbon nanotube (SWCNT) bundle interconnects and conventional copper interconnects. Our simulation results demonstrate the performance superiority of multi-layer GNR interconnects over conventional copper interconnects at small widths (Lt 15 nm). Consequently, multi-layer GNR interconnects demonstrate a great potential to replace conventional copper interconnects in future technologies.
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