Abstract
A mathematical analysis is presented on the measurement of an impurity atom distribution in silicon by the differential capacitance technique. This analysis shows some inherent errors that can arise when the technique is applied to material containing a small impurity atom density. An important conclusion is that the differential capacitance measurement establishes the distribution of majority carriers, rather than the distribution of impurity atoms; therefore this measurement technique is applicable only in regions of semiconductor material exhibiting charge neutrality.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
