Abstract
Using scanning tunneling microscopy, we determine the terrace-width distribution on molecular-beam epitaxially grown vicinal GaAs(100) surfaces. We find a pronounced peak in the frequency at 4 nm, independent of macroscopic tilt angle. To explain this preferred terrace width, which is found by us and other authors, we introduce a simple numerical model of step meandering. The model accounts well for the shape of the terrace-width distribution found experimentally. This suggests that the preferred terrace width of 4 nm can be explained as a direct consequence of the thermodynamics on the surface, without introducing any long-range step-step interactions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
