Abstract
Silicon heterojunction (SHJ) solar cells are at the forefront of high efficiency industrial solar cell manufacturing. The rapid increase in efficiency compared with passivated emitter and rear cell (PERC) cells has significantly propelled commercial interest in this technology. Illuminated annealing under elevated temperatures has been shown to lead to efficiency enhancements in SHJ cells. Recently, it was observed that increasing the light intensity used during the annealing can accelerate the efficiency gains, this approach has started to be incorporated into SHJ manufacturing. In this work, we investigate the kinetics of this high intensity illuminated annealing process in the temperature range from 200 °C to 300 °C, demonstrating that the kinetics and extent of the efficiency gain strongly depend on the temperature of the process. For the first time, we show that the changes in V OC and R S , which control the efficiency enhancement, occur at different rates. Remarkably, by investigating the temperature dependence we demonstrate a process that leads to efficiency gains of >0.4% abs in only 1 s. This new understanding presents a pathway to an industrially compatible annealing approach that significantly increases the power output of SHJ modules. • Illuminated annealing can cause significant efficiency boost for SHJ cells. • Annealing temperature plays a big role in the kinetics of efficiency gain. • Efficiency gain caused by increase in VOC and reduction RS. • An efficiency increase of 0.4%abs achieved with 1 s.
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