On the investigation of 1/F noise of polysilicon emitter P-N-P transistors in a C-BiCMOS technology

J Zhao,K.Y Liao,G.P Li,J.Y.-C Sun,M.R Chin

doi:10.1109/vtsa.1993.263668

On the investigation of 1/F noise of polysilicon emitter P-N-P transistors in a C-BiCMOS technology

J Zhao, K.Y Liao + Show 3 more

https://doi.org/10.1109/vtsa.1993.263668

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Publication Date: May 12, 1993

Citations: 2

Affiliation: University of California, Irvine, IBM Research - Thomas J. Watson Research Center

#C-BiCMOS Technology #Forward Current Stress + Show 8 more

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Abstract

Via forward current stress and reverse breakdown stress to intentionally change the interfacial layer properties, the 1/f noise of base current in polysilicon emitter p-n-p transistors in a C-BiCMOS technology has been investigated. The results show that the 1/f noise of base current is proportional to I/sub b//sup 2/, and the 1/f noise from majority carrier transport through polysilicon grain boundaries is a primary source of 1/f noise. >

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