Abstract
The ability of high temperature oxygen precipitate to act as a gettering sink for copper impurities in p-type silicon substrates has been investigated by the use of resistivity, lifetime and infrared absorption spectroscopy measurements. Copper proved to be a donor impurity in Si and showed a low level of reaction with the oxygen precipitate. This level of reaction, which resulted in the emission of a small amount of interstitial oxygen, appears to be responsible for the poor ability of the high temperature oxygen precipitate to act as an efficient gettering sink for this impurity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
