Optical and Electrical Characterizations of Niobium-doped Ba0.25Sr0.75TiO3 (BSNT) on p-type Silicon and Corning Glass Substrates and its Implementation as Photodiode on Satellite of LAPAN – IPB

Abstract

Niobium-doped Ba0.25Sr0.75TiO3 (BST) thin films with one layer coating have been manufactured on p-type silicon and corning glass substrates using chemical solution deposition and spin coating techniques with a rotational speed of 3000rpm for 30seconds. BST thin films were prepared with concentration of 1M and annealing temperatures of 850°C, 900°C, 950°C on p-type silicon substrate and temperatures of 400°C, 450°C, and 500°C on corning glass substrate. Characterizations of optical by using UV-Vis spectrophotometer and electrical Characterizations were performed I-V meter, respectively. The aim of this research is to characterize optical and electrical of BSNT implementation as photo sensor that can be used satellite control switch. Thin films also have photodiode properties due to its appeared current were faster in light condition of 60 watt then the dark condition. The optical result showed the value of gap energy was 3.31eV, 3.29eV, and 3.21 for BST and 2.93eV, 2.85eV and 2.80eV for BSNT. The electrical result showed voltage knee 2.1 Volt, 1.8 Volt, and 0.5 Volt for BST and 0.4 Volt, 1.5 Volt and 0.3 Volt for BSNT. The results showed that the photo sensor characteristics of BSNT thin films can be used for satellite control switch.